SZ1SMA70CAT3G 데이터 시트보기 (PDF) - ON Semiconductor
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SZ1SMA70CAT3G Datasheet PDF : 5 Pages
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1SMA10CAT3G Series, SZ1SMA10CAT3G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms
PPK
400
W
DC Power Dissipation @ TL = 75C Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from Junction−to−Lead
PD
RqJL
1.5
W
20
mW/C
50
C/W
DC Power Dissipation (Note 3) @ TA = 25C
Derate Above 25C
Thermal Resistance from Junction−to−Ambient
PD
RqJA
0.5
W
4.0
mW/C
250
C/W
Operating and Storage Temperature Range
TJ, Tstg
−65 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
I
IPP
VC VBR VRWM IIRT
IIRT
VRWM VBR VC V
IPP
Bi−Directional TVS
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