Typical Performance Characteristics
500
400
125 °C
300
25 °C
200
100
- 40 °C
V CE = 5V
0
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
0.15
β = 10
0.1
125 °C
0.05
25 °C
- 40 °C
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
1
β = 10
0.8 - 40 °C
0.6
25 °C
0.4
125 °C
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
1
VCE = 5V
0.8
- 40 °C
0.6
0.4
25 °C
125 °C
0.2
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter On Voltage vs.
Collector Current
500
100
V = 30V
CB
10
1
0.1
25
50
75
100
125
150
TA - AMBIENT TEMPERATURE ( °C)
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
10
f = 1.0 MHz
5
4
3
C ibo
2
C obo
1
0.1
1
10
100
REVERSE BIAS VOLTAGE (V)
Figure 6. Capacitance vs. Reverse Bias Voltage
© 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
4
www.fairchildsemi.com