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CAT24C256LI-G 데이터 시트보기 (PDF) - ON Semiconductor

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CAT24C256LI-G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
CAT24C256LI-G Datasheet PDF : 18 Pages
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CAT24C256
Table 5. D.C. OPERATING CHARACTERISTICS New Product (Rev E) (Note 7)
(VCC = 1.8 V to 5.5 V, TA = 40°C to +85°C and VCC = 2.5 V to 5.5 V, TA = 40°C to +125°C, unless otherwise specied.)
Symbol
Parameter
Test Conditions
Min
Max
ICCR
ICCW
ISB
IL
VIL1
VIL2
VIH1
VIH2
VOL1
VOL2
Read Current
Write Current
Standby Current
I/O Pin Leakage
Input Low Voltage
Input Low Voltage
Input High Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Read, fSCL = 400 kHz/1 MHz
All I/O Pins at GND or VCC
Pin at GND or VCC
2.5 V VCC 5.5 V
1.8 V VCC < 2.5 V
2.5 V VCC 5.5 V
1.8 V VCC < 2.5 V
VCC 2.5 V, IOL = 3.0 mA
VCC < 2.5 V, IOL = 1.0 mA
TA = 40°C to +85°C
TA = 40°C to +125°C
TA = 40°C to +85°C
TA = 40°C to +125°C
0.5
0.5
0.7 VCC
0.75 VCC
1
3
2
5
1
2
0.3 VCC
0.25 VCC
VCC + 0.5
VCC + 0.5
0.4
0.2
Units
mA
mA
mA
mA
V
V
V
V
V
V
Table 6. PIN IMPEDANCE CHARACTERISTICS New Product (Rev E) (Note 7)
(VCC = 1.8 V to 5.5 V, TA = 40°C to +85°C and VCC = 2.5 V to 5.5 V, TA = 40°C to +125°C, unless otherwise specied.)
Symbol
Parameter
Conditions
Max
Units
CIN (Note 8)
SDA I/O Pin Capacitance
VIN = 0 V
8
pF
CIN (Note 8)
Input Capacitance (other pins)
VIN = 0 V
6
pF
IWP, IA (Note 9)
WP Input Current, Address Input
Current (A0, A1, A2)
VIN < VIH, VCC = 5.5 V
VIN < VIH, VCC = 3.3 V
75
mA
50
VIN < VIH, VCC = 1.8 V
25
VIN > VIH
2
7. The new product Rev E is identified by letter “E” or a dedicated marking code on top of the package.
8. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100
and JEDEC test methods.
9. When not driven, the WP, A0, A1, A2 pins are pulled down to GND internally. For improved noise immunity, the internal pulldown is relatively
strong; therefore the external driver must be able to supply the pulldown current when attempting to drive the input HIGH. To conserve power,
as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x VCC), the strong pulldown reverts to a weak current source.
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