EMIF06-MSD02N16 데이터 시트보기 (PDF) - STMicroelectronics

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EMIF06-MSD02N16

ESD Suppressors 6-line Micro QFN Lvl 4 20pF 50MHz

STMicroelectronics 

EMIF06-MSD02N16

Characteristics

Figure 2. Electrical characteristics (definitions)

I

IF

Symbol

Parameter

VBR

Breakdown voltage

IRM

VRM

VCL

Rd

Leakage current at VRM

Stand-off voltage

Clamping voltage

Dynamic resistance

VBR

VCL

VRM

VF

IRM

V

IR

IPP

Peak pulse current

RI/O

Series resistance between Input and Output

Cline

Input capacitance per line

IPP

Table 2. Electrical characteristics (Tamb = 25 °C)

Symbol

Test conditions

Min. Typ. Max. Unit

VBR

IRM

R1, R2, R3, R4, R5, R6

R7, R8, R9, R10, R11, R12

R13

Cline

IR = 1 mA

VRM = 3 V per line

Series resistors - tolerance ±20%

Pull-up resistors

Pull-down resistor - tolerance ±20%

VLINE = 0 V dc, VOSC = 30 mV, F = 1 MHz

5

8

V

200 nA

36

45

54

Ω

80

90

100 kΩ

375 470 565 kΩ

20

pF

DS5979 - Rev 2

page 3/14

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