IXGR32N170H1 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXGR32N170H1 Datasheet PDF : 2 Pages
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IXGR 32N170H1
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
E
off
td(on)
tri
Eon
t
d(off)
t
fi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
IC = IT VCE = 10 V, Note 2
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IT VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IT, VGE = 15 V
RG = 2.7 Ω, VCE = 0.8 VCES
Note 4
Inductive load, TJ = 125°C
IC = IT, VGE = 15 V
RG = 2.7 Ω, VCE = 0.8 VCES
Note 4
22 30
3670
210
41
155
28
52
45
38
270
250
10.6
48
42
6.0
360
560
13.6
0.15
S
pF
pF
pF
nC
nC
nC
ns
ns
500 ns
500 ns
20 mJ
ns
ns
mJ
ns
ns
mJ
0.65 K/W
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
VF
VTO
rFO
IRM
trr
RthJC
IF = 20A, VGE = 0 V, Note 2
TJ = 150°C
For conduction power losses only
TJ = 150°C
IF = 20A, VGE = 0 V, VR = 1200 V
-diF/dt = 450 A/μs
TJ = 125°C
T
J
=
125°C
2.85 V
2.9 V
2.1 V
40 mΩ
23
A
27
A
230
ns
400
ns
1.5 K/W
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
3. Test current IT = 21 A.
4. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
5. See IXGH32N170 datasheets for additional IGBT characteristics.
ISOPLUS247 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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