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2N6071A(2006) 데이터 시트보기 (PDF) - ON Semiconductor

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2N6071A
(Rev.:2006)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
2N6071A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2N6071A/B Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
*Peak Repetitive Off-State Voltage (Note 1)
(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
VDRM,
V
VRRM
200
400
600
*On-State RMS Current (TC = 85°C) Full Cycle Sine Wave 50 to 60 Hz
*Peak Non−repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
4.0
A
ITSM
30
A
I2t
3.7
A2s
*Peak Gate Power (Pulse Width 1.0 ms, TC = 85°C)
*Average Gate Power (t = 8.3 ms, TC = 85°C)
*Peak Gate Voltage (Pulse Width 1.0 ms, TC = 85°C)
*Operating Junction Temperature Range
*Storage Temperature Range
Mounting Torque (6-32 Screw) (Note 2)
PGM
PG(AV)
VGM
TJ
Tstg
10
0.5
5.0
−40 to +110
−40 to +150
8.0
W
W
V
°C
°C
in. lb.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
*Thermal Resistance, Junction−to−Case
RqJC
3.5
Thermal Resistance, Junction−to−Ambient
RqJA
75
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
TL
260
*Indicates JEDEC Registered Data.
Unit
°C/W
°C/W
°C
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