2N7002PS 데이터 시트보기 (PDF) - NXP Semiconductors.
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2N7002PS Datasheet PDF : 16 Pages
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NXP Semiconductors
2N7002PS
60 V, 320 mA N-channel Trench MOSFET
10
ID
(A)
1
10−1
10−2
017aaa033
(1)
(2)
(3)
(4)
(5)
(6)
10−3
10−1
1
10
102
VDS (V)
IDM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
Per device
Rth(j-a)
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
Conditions
in free air
in free air
Min Typ Max Unit
[1] -
390 445 K/W
[2] -
340 390 K/W
-
-
130 K/W
[1] -
-
300 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 July 2010
© NXP B.V. 2010. All rights reserved.
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