2N7002PS 데이터 시트보기 (PDF) - NXP Semiconductors.
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2N7002PS Datasheet PDF : 16 Pages
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NXP Semiconductors
2N7002PS
60 V, 320 mA N-channel Trench MOSFET
5.0
VGS
(V)
4.0
017aaa025
3.0
2.0
1.0
0.0
0.0
0.2
0.4
0.6
0.8
QG (nC)
ID = 300 mA; VDS = 30 V; Tamb = 25 °C
Fig 14. Per transistor: Gate-source voltage as a
function of gate charge; typical values
1.2
IS
(A)
0.8
0.4
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 15. Per transistor: Gate charge waveform
definitions
017aaa026
(1)
(2)
0.0
0.0
0.4
0.8
1.2
VSD (V)
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 16. Per transistor: Source current as a function of source-drain voltage; typical values
2N7002PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 July 2010
© NXP B.V. 2010. All rights reserved.
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