2SA1036K(2009) 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SA1036K
(Rev.:2009)

Medium Power Transistor

ROHM Semiconductor 

Medium Power Transistor

2SA1036K

Features

1) Large IC.

ICMAX. = -500mA

2) Low VCE(sat). Ideal for low-voltage

operation.

3) Complements the 2SC2411K.

Structure

Epitaxial planer type

PNP silicon transistor

Absolute maximum ratings (Ta=25C)

Parameter

Symbol

Collector-base voltage

VCBO

Collector-emitter voltage

VCEO

Emitter-base voltage

VEBO

Collector current

IC

Collector power dissipation

PC

Junction temperature

Tj

Storage temperature

∗PC MAX. must not be exceeded.

Tstg

Limits

−40

−32

−5

−0.5

0.2

150

−55 to +150

Unit

V

V

V

A∗

W

°C

°C

Dimensions (Unit : mm)

2SA1036K

2.9±0.2

1.9±0.2 ±

0.95 0.95

(1)

(2)

1.1

+0.2

-0.1

0.8±0.1

0~0.1

(3)

0.4

+0.1

-0.05

All terminals have

same dimensions

ROHM : SMT3

EIAJ : SC-59

0.15

+0.1

-0.06

(1) Emitter

(2) Base

(3) Collector

Abbreviated symbol : H ∗

∗ Denotes hFE

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Collector-base breakdown voltage BVCBO −40

Collector-emitter breakdown voltage BVCEO −32

Emitter-base breakdown voltage

BVEBO −5

Collector outoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage VCE(sat) −

DC current transfer ratio

hFE

120

Transition frequency

fT

−

Output capacitance

Cob

−

Typ.

−

−

−

−

−

−

−

200

7

Max.

−

−

−

−1

−1

−0.6

390

−

−

Unit

V

V

V

μA

μA

V

−

MHz

pF

Conditions

IC= −100μA

IC= −1mA

IE= −100μA

VCB= −20V

VEB= −4V

IC/IB= −300mA/−30mA

VCE= −3V, IC= −100mA

VCE= −5V, IE=20mA, f=100MHz

VCB= −10V, IE=0A, f=1MHz

Packaging specifications

Package

Code

Type

hFE Basic ordering unit (pieces)

2SA1036K QR

Taping

T146

3000

hFE values are classifies as follows.

Item

Q

R

hFE

120 to 270 180 to 390

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○c 2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.B

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