SIHD7N60ET1-GE3(2013) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHD7N60ET1-GE3 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHD7N60E
Vishay Siliconix
20 TOP 15 V
14 V
13 V
12 V
11 V
16
10 V
9V
8V
7V
6V
12 BOTTOM 5 V
TJ = 25 °C
8
4
0
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
3
ID = 3.5 A
2.5
2
1.5
VGS = 10 V
1
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
12
TOP 15 V
14 V
13 V
12 V
11 V
9
10 V
9V
8V
7V
6V
BOTTOM 5 V
6
TJ = 150 °C
3
0
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
10 000
1000
100
10
Coss
Crss
Ciss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
1
0 100 200 300 400 500 600
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
TJ = 25 °C
16
12
8
TJ = 150 °C
4
24
VDS = 480 V
20
VDS = 300 V
VDS = 120 V
16
12
8
4
0
0
5
10
15
20
25
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
0
0
10
20
30
40
Qg, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S13-1419-Rev. C, 01-Jul-13
3
Document Number: 91510
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