2SC3138O(2003) 데이터 시트보기 (PDF) - Toshiba

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2SC3138O
(Rev.:2003)

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)

Toshiba 

2SC3138

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)

2SC3138

High Voltage Switching Applications

· High voltage: VCBO = 200 V (max)

VCEO = 200 V (max)

· Small flat package

· Complementary to 2SA1255

Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Marking

Rating

Unit

200

V

200

V

5

V

50

mA

20

mA

150

mW

125

°C

-55~125

°C

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

1

2003-03-27

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