2SC3138 데이터 시트보기 (PDF) - Toshiba
부품명
상세내역
제조사
2SC3138 Datasheet PDF : 5 Pages
| |||
2SC3138
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3138
High Voltage Amplifier Applications
High Voltage Switching Applications
Unit: mm
• High voltage: VCBO = 200 V (max)
VCEO = 200 V (max)
• Small flat package
• Complementary to 2SA1255
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
200
V
200
V
5
V
50
mA
20
mA
150
mW
125
°C
−55 to 125
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.012 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1982-10
1
2014-03-01
Share Link: 