2SC3138 데이터 시트보기 (PDF) - Toshiba

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2SC3138

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)

Toshiba 

2SC3138

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-base breakdown voltage

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Turn-on time

Switching time

Storage time

Fall time

Symbol

Test Condition

Min Typ. Max Unit

ICBO

VCB = 200 V, IE = 0

IEBO

VEB = 5 V, IC = 0

V(BR) CBO IC = 0.1 mA, IE = 0

V(BR) CEO IC = 1 mA, IB = 0

hFE

(Note)

VCE = 3 V, IC = 10 mA

VCE (sat) IC = 10 mA, IB = 1 mA

VBE (sat) IC = 10 mA, IB = 1 mA

fT

VCE = 10 V, IC = 2 mA

Cob

VCB = 10 V, IE = 0, f = 1 MHz

⎯

⎯

0.1

μA

⎯

⎯

0.1

μA

200 ⎯

⎯

V

200 ⎯

⎯

V

70

⎯

240

⎯

⎯

0.1

0.5

V

⎯ 0.75 1.5

V

50 100 ⎯ MHz

⎯

2

4

pF

ton

OUTPUT

⎯

0.3

⎯

INPUT 7 kΩ

tstg

10 V

0

⎯

2

⎯

μs

VCC

5 μs

VBB = 50 V

tf

Duty cycle ≤ 2%

= −3 V

⎯

0.4

⎯

Note: hFE classification O: 70 to 140, Y: 120 to 240

Marking

N: Type Name

O: hFE Rank

2

2014-03-01

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