2SC5661(2009) 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SC5661 Datasheet PDF : 4 Pages
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High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz)
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K
Features
1) High transition frequency. (Typ. fT = 1.5GHz)
2) Small rbb’Cc and high gain. (Typ. 6ps)
3) Small NF.
Packaging specifications and hFE
Type
2SC5661
2SC4725
Package
VMT3
EMT3
hFE
Marking
NP
NP
AC∗
AC∗
Code
T2L
TL
Basic ordering unit
(pieces)
8000
3000
∗ Denotes hFE
2SC4082
UMT3
NP
1C∗
T106
3000
2SC3837K
SMT3
NP
AC∗
T146
3000
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SC5661, 2SC4725
2SC4082, 2SC3837K
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
30
V
VCEO
20
V
VEBO
3
V
IC
50
mA
0.15
PC
W
0.2
Tj
150
°C
Tstg
−55 to +150
°C
Dimensions (Unit : mm)
2SC5661
ROHM : VMT3
2SC4725
(1) Base
(2) Emitter
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
SOT-416
2SC4082
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
2SC3837K
2.9
0.4
(3)
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
1.1
0.8
ROHM : SMT3
EIAJ : SC-59
(2)
(1)
0.95 0.95
1.9
(1) Emitter
(2) Base
0.15
(3) Collector
Each lead has same dimensions
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
BVCBO
30
BVCEO
20
BVEBO
3
ICBO
−
IEBO
−
VCE(sat)
−
DC current transfer ratio
hFE
82
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
fT
600
Cob
−
rbb'·Cc
−
NF
−
Typ.
−
−
−
−
−
−
−
1500
0.9
6
4.5
Max.
−
−
−
0.5
0.5
0.5
180
−
1.5
13
−
Unit
V
V
V
μA
μA
V
−
MHz
pF
ps
dB
Conditions
IC = 10μA
IC = 1mA
IE = 10μA
VCB = 15V
VEB = 2V
IC/IB = 20mA/4mA
VCE/IC = 10V/10mA
VCE = 10V , IE = −10mA , f = 200MHz
VCB = 10V , IE = 0A , f = 1MHz
VCB = 10V , IC = 10mA , f = 31.8MHz
VCE = 12V , IC = 2mA , f = 200MHz , Rg = 50Ω
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.C
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