2SC5813 데이터 시트보기 (PDF) - Panasonic Corporation
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2SC5813 Datasheet PDF : 3 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5813
Silicon NPN epitaxial planar type
For DC-DC converter
■ Features
• Low collector-emitter saturation voltage VCE(sat)
/ • Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
nce d stage. ■ Absolute Maximum Ratings Ta = 25°C
cle Parameter
Symbol Rating
Unit
a e lifecy Collector-base voltage (Emitter open) VCBO
80
V
t Collector-emitter voltage (Base open) VCEO
80
V
n u duc Emitter-base voltage (Collector open) VEBO
5
V
ro Collector current
IC
1.5
A
te tin ur P Peak collector current
ICP
3
A
g fo e . Collector power dissipation *
PC
600
mW
win typ tion Junction temperature
Tj
150
°C
in n follo nce e d a Storage temperature
Tstg −55 to +150 °C
es tena typ type form / Note) *: Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 5H
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
a coed incluedd maintenancetinued type latest in o.jp/en ■ Electrical Characteristics Ta = 25°C ± 3°C
M is tinu lan ain con ed ut ic.c Parameter
Symbol
Conditions
Min Typ Max Unit
p m dis tinu abo son Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
80
V
con ed on L na Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
80
V
is lan isc UR .pa Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
e/D p d ing icon Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0
0.1
µA
Danc llow m Forward current transfer ratio *
hFE VCE = 2 V, IC = 100 mA
200
ten fo .se Collector-emitter saturation voltage * VCE(sat) IC = 1 A, IB = 20 mA
350 500 mV
in isit ww Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
180
MHz
Ma e v ://w Collector output capacitance
as ttp (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
15 25
pF
Ple h Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: December 2002
SJC00285BED
1
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