PMBFJ110 데이터 시트보기 (PDF) - NXP Semiconductors.
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PMBFJ110 Datasheet PDF : 9 Pages
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NXP Semiconductors
PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
7. Static characteristics
Table 6. Static characteristics
Tj = 25 C.
Symbol Parameter
Conditions
IGSS
gate-source leakage current
VGS = 15 V; VDS = 0 V
IDSX
drain-source cut-off current
VGS = 10 V; VDS = 5 V
IDSS
drain-source leakage current
PMBFJ108
VGS = 0 V; VDS = 15 V
PMBFJ109
VGS = 0 V; VDS = 15 V
V(BR)GSS
VGSoff
PMBFJ110
gate-source breakdown voltage
gate-source cut-off voltage
PMBFJ108
PMBFJ109
VGS = 0 V; VDS = 15 V
IG = 1 A; VDS = 0 V
ID = 1 A; VDS = 5 V
ID = 1 A; VDS = 5 V
PMBFJ110
ID = 1 A; VDS = 5 V
RDSon drain-source on-state resistance
PMBFJ108
VGS = 0 V; VDS = 0.1 V
PMBFJ109
VGS = 0 V; VDS = 0.1 V
PMBFJ110
VGS = 0 V; VDS = 0.1 V
8. Dynamic characteristics
Min Typ Max Unit
- - 3 nA
- - 3 nA
80 -
40 -
10 -
--
- mA
- mA
- mA
25 V
10 -
6 -
4 -
3 V
2 V
0.5 V
- - 8
- - 12
- - 18
Table 7. Dynamic characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Ciss
input capacitance
Crss
feedback capacitance
Switching times (see Figure 2)
td
delay time
ton
turn-on time
ts
storage time
toff
turn-off time
Conditions
VDS = 0 V; VGS = 10 V; f = 1 MHz
VDS = 0 V; VGS = 0 V; f = 1 MHz; Tamb = 25 C
VDS = 0 V; VGS = 10 V; f = 1 MHz
[1] Test conditions for switching times are as follows:
VDD = 1.5 V, VGS = 0 V to VGSoff (all types);
VGSoff = 12 V, RL = 100 (PMBFJ108);
VGSoff = 7 V, RL = 100 (PMBFJ109);
VGSoff = 5 V, RL = 100 (PMBFJ110).
Min Typ Max Unit
- 15 30 pF
- 50 85 pF
- 8 15 pF
[1] -
2-
ns
[1] -
4-
ns
[1] -
4-
ns
[1] -
6-
ns
PMBFJ108_109_110
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
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