IXFH10N80P 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXFH10N80P Datasheet PDF : 5 Pages
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Fig. 8. Input Admittance
10
9
8
7
6
5
4
3
TJ = 125ºC
25ºC
2
- 40ºC
1
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VG S - Volts
Fig. 10. Source Current vs.
Source-To-Drain Voltage
30
27
24
21
18
15
12
9
TJ = 125ºC
6
3
TJ = 25ºC
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VS D - Volts
10000
1000
Fig. 12. Capacitance
f = 1MHz
Ciss
100
Coss
IXFA10N80P IXFP10N80P
IXFQ10N80P IXFH10N80P
18
16
14
12
10
8
6
4
2
0
0
Fig. 9. Transconductance
TJ = - 40ºC
25ºC
125ºC
12345678
I D - Amperes
9 10
Fig. 11. Gate Charge
10
9
VDS = 400V
8
ID = 5A
7
IG = 10m A
6
5
4
3
2
1
0
0
5 10 15 20 25 30 35 40
Q G - nanoCoulombs
1.00
Fig. 13. Maximum Transient Thermal
I m pe da nce
0.10
Crss
10
0
5 10 15 20 25 30 35 40
VD S - Volts
0.01
0.0001 0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_10N80P(5J)8-18-09-A
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