SIHA12N50E 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHA12N50E Datasheet PDF : 8 Pages
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24
VDS = 400 V
VDS = 250 V
20
VDS = 100 V
16
12
8
4
0
0
10
20
30
40
50
Qg, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
100
TJ = 150 °C
10
1
TJ = 25 °C
0.1
0.2
VGS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
100
Operation in this Area
Limited by RDS(on)
10
1
Limited by RDS(on)*
IDM Limited
100 μs
1 ms
0.1
10 ms
0.01
TC = 25 °C
TJ = 150 °C
Single Pulse
BVDSS Limited
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
SiHA12N50E
Vishay Siliconix
12
9
6
3
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
650
625
600
575
550
525
500
475
- 60 - 40 - 20 0
ID = 250 μA
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
S16-1601-Rev. C, 15-Aug-16
4
Document Number: 91637
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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