SIHA12N50E-E3 데이터 시트보기 (PDF) - Vishay Semiconductors

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SIHA12N50E-E3

E Series Power MOSFET

Vishay Semiconductors 

www.vishay.com

SiHA12N50E

Vishay Siliconix

1

Duty Cycle = 0.5

0.2

0.1

0.1 0.05

0.02

Single Pulse

0.01

0.0001

0.001

0.01

0.1

1

10

Pulse Time (s)

Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 13 - Switching Time Test Circuit

VDS

VDS

tp

VDD

IAS

Fig. 16 - Unclamped Inductive Waveforms

VDS

90 %

10 V

QGS

QG

QGD

10 %

VGS

td(on) tr

td(off) tf

Fig. 14 - Switching Time Waveforms

VG

Charge

Fig. 17 - Basic Gate Charge Waveform

VDS

Vary tp to obtain

required IAS

RG

10 V

tp

L

D.U.T

IAS

0.01 Ω

+

- VDD

Fig. 15 - Unclamped Inductive Test Circuit

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 18 - Gate Charge Test Circuit

S16-1601-Rev. C, 15-Aug-16

5

Document Number: 91637

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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