KA1H0165RN 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

제조사

KA1H0165RN

Fairchild Power Switch(FPS)

Fairchild Semiconductor 

KA1H0165RN/KA1H0165R

Electrical Characteristics (SFET Part)

(Ta=25°C unless otherwise specified)

Parameter

Drain-Source Breakdown Voltage

Symbol

BVDSS

Zero Gate Voltage Drain Current

IDSS

Static Drain-Source on Resistance (Note)

Forward Transconductance (Note)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

Total Gate Charge

(Gate-Source+Gate-Drain)

Gate-Source Charge

Gate-Drain (Miller) Charge

RDS(ON)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

2. S = -1--

R

Condition

Min. Typ. Max. Unit

VGS=0V, ID=50µA

650 -

-

V

VDS=Max., Rating,

VGS=0V

-

- 50 µA

VDS=0.8Max., Rating,

VGS=0V, TC=125°C

-

- 200 µA

VGS=10V, ID=0.5A

-

8 10 Ω

VDS=50V, ID=0.5A

0.5 -

-

S

VGS=0V, VDS=25V,

f=1MHz

- 250 -

- 25 - pF

- 10 -

VDD=0.5B VDSS, ID=1.0A - 12 -

(MOSFET switching

time is essentially

independent of

-

4

-

nS

- 30 -

operating temperature)

- 10 -

VGS=10V, ID=1.0A,

VDS=0.5B VDSS (MOSFET

-

switching time is essentially -

independent of operating

temperature)

-

- 21

3

- nC

9

-

3

Share Link: