SGB10N60A(2007) 데이터 시트보기 (PDF) - Infineon Technologies

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SGB10N60A
(Rev.:2007)

Fast IGBT in NPT-technology

Infineon Technologies 

SGB10N60A

1 ,6 m J

1 ,4 m J

*) Eon and Ets include losses

due to diode recovery.

1 ,2 m J

E ts*

1 ,0 m J

0 ,8 m J

0 ,6 m J

0 ,4 m J

Eon*

E off

0 ,2 m J

0 ,0 m J

0A

5A

10A 15A 20A 25A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, RG = 2 5 Ω,

Dynamic test circuit in Figure E)

1,0m J

*) Eon and Ets include losses

due to diode recovery.

0,8m J

E ts*

0,6m J

0,4m J

E off

Eon*

0,2m J

0Ω

20Ω

40Ω

60Ω

80Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, IC = 10A,

Dynamic test circuit in Figure E)

0,8mJ

*) Eon and Ets include losses

due to diode recovery.

0,6mJ

0,4mJ

Ets*

0,2mJ

Eoff

Eon*

0,0mJ

0°C

50°C

100°C

150°C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 10A, RG = 2 5Ω,

Dynamic test circuit in Figure E)

100K/W

D=0.5

0.2

10-1K/W

0.1

0.05

0.02

10-2K/W 0.01

R,(K/W)

0.4287

0.4830

0.4383

τ, (s)

0.0358

4.3*10-3

3.46*10-4

R1

R2

single pulse

C1=τ1/R1 C2=τ2/R2

10-3K/W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = tp / T)

7

Rev. 2.3 July 07

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