G10N60A 데이터 시트보기 (PDF) - Infineon Technologies

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G10N60A

Fast IGBT in NPT-technology

Infineon Technologies 

SGP10N60A, SGB10N60A

SGW10N60A

25V

20V

1nF

C iss

15V

10V

5V

120V

480V

100pF

Coss

Crss

0V

0nC

25nC

50nC

75nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC = 10A)

10pF

0V

10V

20V

30V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

25µs

200A

20µs

15µs

10µs

5µs

150A

100A

50A

0µs

10V

11V

12V

13V

14V

15V

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 600V, start at Tj = 25°C)

0A

10V

12V

14V

16V

18V

20V

VGE, GATE-EMITTER VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(VCE ≤ 600V, Tj = 150°C)

8

Jul-02

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