STP10NM50N 데이터 시트보기 (PDF) - STMicroelectronics

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STP10NM50N

N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

STD10NM50N, STF10NM50N, STP10NM50N

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

(VGS = 0)

Zero gate voltage

IDSS drain current (VGS = 0)

IGSS

Gate-body leakage

current (VDS = 0)

VGS(th) Gate threshold voltage

RDS(on)

Static drain-source on

resistance

Test conditions

ID = 1 mA

VDS = 500 V

VDS = 500 V, TC = 125 °C

VGS = ± 25 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 3.5 A

Min. Typ. Max. Unit

500

V

1 µA

100 µA

0.1 µA

2

3

4V

0.53 0.63 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

450

pF

- 38 - pF

1.3

pF

Coss

(1)

eq.

Equivalent output

catacitance

VGS = 0, VDS = 0 to 400 V

- 167 - pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

Rg Gate input resistance

VDD = 400 V, ID = 7 A,

VGS = 10 V,

(see Figure 18)

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

17

nC

- 3.3 - nC

8.5

nC

- 4.7 - Ω

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS.

4/18

Doc ID 16929 Rev 3

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