Silicon MOSFETs (Small Signal)
2SK1374
Silicon N-channel MOSFET
For switching circuits
0.3+–00..01
Unit: mm
0.15+–00..0150
■ Features
3
• High-speed switching
• Wide frequency band
• Incorporating a built-in gate protection-diode
1
2
• Allowing 2.5 V drive
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
Drain-source voltage
e e) Gate-source voltage (Drain open)
c . typ Drain current
n d stage tinued Peak drain current
le on Power dissipation
a elifecyc disc Channel temperature
n u ct ped, Storage temperature
VDS
50
V
VGSO
10
V
ID
50
mA
IDP
100
mA
PD
150
mW
Tch
150
°C
Tstg −55 to +150 °C
EIAJ: SC-70
Marking Symbol: 4V
1: Gate
2: Source
3: Drain
SMini3-G1 Package
te tin ur Prodtiunued ty ■ Electrical Characteristics Ta = 25°C
ing fo iscon Parameter
Symbol
Conditions
Min Typ Max Unit
in n follow ed d Drain-source surrender voltage
es plan Drain-source cutoff current
a o clud pe, Gate-source cutoff current
c ed in ce ty Gate threshold voltage
tinu nan Forward transfer admittance
M is con inte Drain-source ON resistance
/Dis , ma Short-circuit forward transfer capacitance
D ance type (Common source)
VDSS
IDSS
IGSS
Vth
Yfs
RDS(on)
Ciss
ID = 10 µA, VGS = 0
VDS = 20 V, VGS = 0
VGS = 10 V, VDS = 0
ID = 100 µA, VDS = 5 V
ID = 10 mA, VDS = 5 V, f = 1 kHz
ID = 10 mA, VGS = 2.5 V
VDS = 5 V, VGS = 0, f = 1 MHz
50 100
V
1.0
µA
1.0
µA
0.5 0.8 1.1
V
20 39
mS
27 50
Ω
4.5
pF
ten ce Short-circuit output capacitance
Coss
ain nan (Common source)
4.1
pF
M inte Reverse transfer capacitance
Crss
ma (Common source)
1.2
pF
ned Turn-on time *1, 2
(pla Turn-off time *1, 2
ton
VDD = 5 V, RL = 470 Ω, VGS = 0 V to 2.5 V
0.2
µs
toff
VDD = 5 V, RL = 470 Ω, VGS = 2.5 V to 0 V
0.2
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: ton , toff test circuit
VOUT
470 Ω
90%
10%
VIN
VGS = 2.5 V
50 Ω
100 µF
VDD = 5 V
VOUT
10%
90%
ton
toff
Publication date: March 2004
SJF00028BED
1