1N4151W-G 데이터 시트보기 (PDF) - Vishay Semiconductors
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1N4151W-G Datasheet PDF : 5 Pages
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1N4151W-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
IF = 50 mA
VF
Leakage current
VR = 50 V
IR
VR = 20 V, Tj = 150 °C
IR
Reverse breakdown voltage
IR = 5 μA (pulsed)
V(BR)
75
Diode capacitance
VF = VR = 0 V
CD
Reverse recovery time
IF = 10 mA, IR = 10 mA
iR = 1 mA
trr
IF = 10 mA, iR = 1 mA
VR = 6 V, RL = 100
trr
MAX.
1.0
50
50
2
4
2
UNIT
V
nA
μA
V
pF
ns
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1000
100 Tj = 100 ° C
800
10
25 ° C
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
18742
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
600
400
200
0
0 20 40 60 80 100 120 140 160180 200
18743
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
10000
1000
Tj = 25 ° C
f = 1 kHz
100
10
1
0.01
0.1
1
10
100
18662
IF - Forward Current (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
1.1
Tj = 25 ° C
f = 1 MHz
1.0
0.9
0.8
0.7
0
18664
2
4
6
8
10
VR - Reverse Voltage (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.1, 22-Feb-18
2
Document Number: 85408
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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