1N4151W-G 데이터 시트보기 (PDF) - Vishay Semiconductors
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1N4151W-G Datasheet PDF : 5 Pages
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1N4151W-G
Vishay Semiconductors
10000
1000
100
10
VR = 50 V
1
0 20 40 60 80 100 120 140 160 180 200
18744
Tj - Junction Temperature (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
100
ν =0
10
0. 1
0. 2
1
0. 5
I ν = t p /T
I FRM
tp
T
T = 1/fp
t
18709
10 -5
10 -4
10 -3
10 -2
10 -1
1
10
tp - Pulse Length (s)
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
Rev. 1.1, 22-Feb-18
3
Document Number: 85408
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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