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1PS181 데이터 시트보기 (PDF) - NXP Semiconductors.

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1PS181
NXP
NXP Semiconductors. NXP
1PS181 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
NXP Semiconductors
High-speed double diode
Product data sheet
1PS181
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 80 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS181 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small plastic SMD SC59 package.
PINNING
PIN
1
2
3
DESCRIPTION
cathode (k1)
cathode (k2)
common anode
2
1
2
1
3
Top view
3
MAM082
Marking code: A3T.
Fig.1 Simplified outline (SC59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
square wave; Tj = 25 °C prior to
surge
t = 1 μs
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
85 V
80 V
215 mA
125 mA
500 mA
4A
0.5 A
250 mW
65 +150 °C
150 °C
1996 Sep 03
2

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