VS-20ETF06FPPBF 데이터 시트보기 (PDF) - Vishay Semiconductors
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VS-20ETF06FPPBF Datasheet PDF : 8 Pages
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VS-20ETF0..FPPbF Series, VS-20ETF0..FP-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
VFM
rt
VF(TO)
IRM
TEST CONDITIONS
20 A, TJ = 25 °C
60 A, TJ = 25 °C
TJ = 150 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.30
1.67
12.5
0.9
0.1
5.0
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 20 Apk
100 A/μs
25 °C
Typical
VALUES
160
10
1.25
0.6
UNITS
ns
A
μC
IFM
trr
ta tb
t
dir
dt
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220 FULL-PAK
VALUES
-40 to +150
UNITS
°C
2.5
62
°C/W
0.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
20ETF02FP
20ETF04FP
20ETF06FP
Revision: 11-Feb-16
2
Document Number: 94095
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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