NGTB50N120FL2WG 데이터 시트보기 (PDF) - ON Semiconductor
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NGTB50N120FL2WG Datasheet PDF : 8 Pages
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NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
200
180 TJ = 25°C
160
VGE = 20 V
140
to 13 V
120
100
11 V
80
60
10 V
40
9V
20
7V
8V
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
200
TJ = 150°C
180
160
140
VGE = 20 V
to 13 V
120
100
11 V
80
60
10 V
40
9V
20
8V
7V
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
200
180
160
140
120
100
80
60
40
20
0
0
VGE = 20 V
to 13 V
TJ = −55°C
11 V
10 V
7V
9V
8V
1
2
3
4
5
6
7
8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
200
180
160
140
120
100
80
60
40
TJ = 150°C
20
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
4.50
100000
4.00
IC = 100 A
3.50
10000
3.00
2.50
IC = 50 A
1000
2.00
IC = 25 A
100
1.50
1.00
10
0.50
0.00
1
−75 −50 −25 0 25 50 75 100 125 150 175 200
0
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs TJ
Cies
Coes
Cres
TJ = 25°C
10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
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