NGTB50N120FL2WG 데이터 시트보기 (PDF) - ON Semiconductor
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NGTB50N120FL2WG Datasheet PDF : 8 Pages
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NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
450
400
350
TJ = 175°C, IF = 50 A
300
250
200
TJ = 25°C, IF = 50 A
150
100
50
100
300
500
700
900 1100
diF/dt, DIODE CURRENT SLOPE (A/m)
Figure 19. trr vs. diF/dt (VR = 400 V)
1300
70
60
TJ = 175°C, IF = 50 A
50
40
30
TJ = 25°C, IF = 50 A
20
10
100
300
500
700
900 1100
diF/dt, DIODE CURRENT SLOPE (A/m)
Figure 21. Irm vs. diF/dt (VR = 400 V)
1300
7
6
TJ = 175°C, IF = 50 A
5
4
TJ = 25°C, IF = 50 A
3
2
100
300
500
700
900
1100 1300
diF/dt, DIODE CURRENT SLOPE (A/m)
Figure 20. Qrr vs. diF/dt (VR = 400 V)
3.5
IF = 75 A
3.0
2.5
IF = 50 A
2.0
IF = 25 A
1.5
1.0
−75 −50 −25 0 25 50 75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 22. VF vs. TJ
250
VCE = 600 V, RG = 10 W, VGE = 0/15 V
200
TC = 80°C
150
100
TC = 110°C
50
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 23. Collector Current vs. Switching
Frequency
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