020N06N 데이터 시트보기 (PDF) - Infineon Technologies
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020N06N Datasheet PDF : 9 Pages
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Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
T C=25 °C
T A=25 °C,
R thJA=50 K/W
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPI020N06N
Value
Unit
214
W
3.0
-55 ... 175
°C
55/175/56
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC bottom
-
Device on PCB
R thJA minimal footprint
-
6 cm² cooling area4)
-
-
0.7 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=143 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1 µA
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=100 A
-
V GS=6 V, I D=25 A
-
Gate resistance
RG
-
10
100 nA
1.8
2 mW
2.1
3.0
1.6
2.4 W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
100
210
-S
Rev.2.2
page 2
2012-12-20
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