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020N06N 데이터 시트보기 (PDF) - Infineon Technologies
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020N06N
OptiMOS™ Power-Transistor
Infineon Technologies
020N06N Datasheet PDF : 9 Pages
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Parameter
Symbol Conditions
IPI020N06N
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
-
C
oss
V
GS
=0 V,
V
DS
=30 V,
f
=1 MHz
-
C
rss
-
t
d(on)
-
t
r
V
DD
=30 V,
V
GS
=10 V,
-
I
D
=100 A,
t
d(off)
R
G,ext
,ext=3
W
-
t
f
-
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q
gs
-
Q
g(th)
-
Q
gd
V
DD
=30 V,
I
D
=100 A,
-
Q
sw
V
GS
=0 to 10 V
-
Q
g
-
V
plateau
-
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 10 V
-
Q
oss
V
DD
=30 V,
V
GS
=0 V
-
Reverse Diode
Diode continuous forward current
I
S
-
T
C
=25 °C
Diode pulse current
I
S,pulse
-
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
-
Reverse recovery time
Reverse recovery charge
t
rr
V
R
=30 V,
I
F
=100
A
,
-
Q
rr
d
i
F
/d
t
=100 A/µs
-
7800
1800
69
24
45
51
19
9750 pF
2250
138
- ns
-
-
-
35
- nC
22
-
19
25
33
-
106
124
4.5
-V
94
- nC
119
-
-
120 A
-
480
0.9
1.2 V
76
122 ns
97
- nC
5)
See figure 16 for gate charge parameter definition
Rev.2.2
page 3
2012-12-20
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