FGB20N60SFD_F085 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FGB20N60SFD_F085

600V, 20A Field Stop IGBT

Fairchild Semiconductor 

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

VFM

Diode Forward Voltage

IF = 10A

TC = 25oC

TC = 125oC

trr

Qrr

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

IES = 10A, dIES/dt = 200A/μs

TC = 25oC

TC = 125oC

TC = 25oC

TC = 125oC

Min.

-

-

-

-

-

-

Typ.

1.9

1.7

111

204

174

463

Max

2.5

-

-

-

244

-

Units

V

ns

nC

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

2:Rthjc for D2-PAK: according to Mil standard 883-1012 test method.

Rthja for D2-PAK: according to JESD51-2, test method environmental condition and JESD51-3,low effective thermal conductivity test board for leaded surface mount package.

thermal measurements. JESD51-2: Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air).

©2013 Fairchild Semiconductor Corporation

3

FGB20N60SFD_F085 Rev. C1

www.fairchildsemi.com

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