FGB20N60SFD_F085 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FGB20N60SFD_F085 Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
IC = 10A
40A
4
20A
0
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
2500
2000
Common Emitter
VGE = 0V, f = 1MHz
Cies
TC = 25oC
1500
1000
C oes
500
Cres
0
0.1
1
10
30
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
100
10μs
100μs
10
1ms
10 ms
1
DC
0.1 *Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
IC = 10A
40A
4
20A
0
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 100V
300V
9
200V
6
3
0
0
20
40
60
80
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
tr
td(on)
10
0
10
20
30
40
50
Gate Resistance, RG [Ω]
©2013 Fairchild Semiconductor Corporation
5
FGB20N60SFD_F085 Rev. C1
www.fairchildsemi.com
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