STP25N10F7 데이터 시트보기 (PDF) - STMicroelectronics

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STP25N10F7

N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages

STMicroelectronics 

STD25N10F7, STF25N10F7, STP25N10F7

Electrical characteristics

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Table 6. Switching times

Test conditions

VDD = 50 V, ID = 12.5 A,

RG = 4.7 Ω, VGS = 10 V

Figure 17

Min. Typ. Max. Unit

- 9.8

-

ns

- 14

-

ns

- 14.8 -

ns

- 4.6

-

ns

Symbol

Table 7. Source-drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

-

(1)

ISDM Source-drain current (pulsed)

-

(2)

VSD Forward on voltage

ISD = 25 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

ISD = 25 A,

di/dt = 100 A/μs,

-

VDD = 80 V, Tj = 150 °C -

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

25 A

100 A

1.1 V

38

ns

29

nC

1.7

A

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