042N06N(2020) 데이터 시트보기 (PDF) - Infineon Technologies
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042N06N Datasheet PDF : 11 Pages
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OptiMOSTMPower-Transistor,60V
BSZ042N06NS
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
60
2.1
-
-
-
-
-
-
27
Values
Typ. Max.
-
-
2.8 3.3
0.5 1
10 100
10 100
3.4 4.2
4.9 6.3
1.6 2.4
54 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V
VDS=VGS,ID=36µA
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=20A
VGS=6V,ID=5A
Ω-
S
|VDS|>2|ID|RDS(on)max,ID=20A
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Unit Note/TestCondition
Typ. Max.
2000 2500 pF VGS=0V,VDS=30V,f=1MHz
490 612.5 pF VGS=0V,VDS=30V,f=1MHz
22
44
pF VGS=0V,VDS=30V,f=1MHz
10 -
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext,ext=1.7Ω
7
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext,ext=1.7Ω
19 -
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext,ext=1.7Ω
6
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext,ext=1.7Ω
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
Values
Typ. Max.
9
-
5
-
5
7
8
-
27 32
4.4 -
24 -
32 40
Unit Note/TestCondition
nC VDD=30V,ID=20A,VGS=0to10V
nC VDD=30V,ID=20A,VGS=0to10V
nC VDD=30V,ID=20A,VGS=0to10V
nC VDD=30V,ID=20A,VGS=0to10V
nC VDD=30V,ID=20A,VGS=0to10V
V VDD=30V,ID=20A,VGS=0to10V
nC VDS=0.1V,VGS=0to10V
nC VDD=30V,VGS=0V
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.4,2020-03-13
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