042N06N 데이터 시트보기 (PDF) - Infineon Technologies

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042N06N

OptiMOS™ Power-Transistor, 60V

Infineon Technologies 

OptiMOSTMPower-Transistor,60V

BSZ042N06NS

1Description

Features

•OptimizedforhighperformanceSMPS,e.g.sync.rec.

•100%avalanchetested

•Superiorthermalresistance

•N-channel

•QualifiedaccordingtoJEDEC1)fortargetapplications

•Pb-freeleadplating;RoHScompliant

•Halogen-freeaccordingtoIEC61249-2-21

•Highersolderjointreliabilityduetoenlargedsourceinterconnection

TSDSON-8FL

(enlarged source interconnection)

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS

60

V

RDS(on),max

4.2

mΩ

ID

40

A

QOSS

32

nC

QG(0V..10V)

27

nC

S1

8D

S2

7D

S3

6D

G4

5D

Type/OrderingCode

BSZ042N06NS

Package

PG-TSDSON-8 FL

Marking

042N06N

RelatedLinks

-

1) J-STD20 and JESD22

Final Data Sheet

2

Rev.2.3,2014-11-10

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