MSR2N2369AUBC 데이터 시트보기 (PDF) - Microsemi Corporation
부품명
상세내역
제조사
MSR2N2369AUBC Datasheet PDF : 7 Pages
| |||
MSR2N2369AUB / UBC
Rad Hard NPN Silicon High Speed
Switching Transistor
Screened per MIL-PRF-19500 & ESCC 22900
Screened Levels:
MSR
Radiation Level
TID
ELDRS
QPL RANGE and RAD LEVEL
MSR2N2369AUB
100 Krad
100 Krad
DESCRIPTION
This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to
drive many high-reliability applications. This device is constructed and screened to a JANSR
performance level with radiation test method 1019 wafer lot acceptance conducted on all die
lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness
assurance requirements for space flight projects
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N2369
TID level screened per MIL-PRF-19500
Also available with ELDRS testing to 0.01 Rad(s)/ sec
MKCR / MHCR chip die available
RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose rate
APPLICATIONS / BENEFITS
Rad-Hard power supplies
Rad-Hard motor controls
General purpose switching
Instrumentation Amps
EPS Satellite switching power applications
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise noted
UB & UBC
Package
Also available in:
AU package
(surface mount)
MSR2N2369AU
TO-206AA package
(leaded top-hat)
MSR2N2369A
UA package
(surface mount)
MSR2N2369AUA
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Solder Pad
Thermal Resistance Junction-to-Ambient
Total Power Dissipation:
@ TA = +25 ºC (1)
@ TC = +125 ºC (2) (3)
@ TSP = +125 ºC (2)
Collector-Base Voltage, Emitter Open
Emitter-Base Voltage, Collector Open
Collector-Emitter Voltage, Base Open
Collector Current, dc
Solder Temperature @ 10 s
Symbol
TJ and TSTG
RӨJSP
RӨJA
PT
VCBO
VEBO
VCEO
VCES
TSP
Value
-65 to +200
210
486
0.36
0.36
0.36
40
4.5
15
40
260
Notes: 1. Derate linearly 2.06 mW/°C above TA = +25°C.
2. Derate linerly 4.8 mW/°C above TC =+125°C. See Figure 1.
3. Power dissipation limited to 360 mW per chip regardless of thermal resistance.
Unit
ºC
ºC/W
ºC/W
W
V
V
V
V
oC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0338-3, Rev. 1 (04/22/14)
©2014 Microsemi Corporation
Page 1 of 7
Share Link: 