MSR2N2369AUBC 데이터 시트보기 (PDF) - Microsemi Corporation
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MSR2N2369AUBC Datasheet PDF : 7 Pages
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MSR2N2369AUB / UBC
Radiation hardness assurance
The MSR series product are guaranteed in radiation with full compliance to MIL-PRF-19500 specification
JANSR level and are also guaranteed to meet ESCC 22900 specifications (General specifications) .
Radiation assurance MIL-PRF-19500
MSR parts are guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-19500 specification, specifically
the Group D, subgroup 2 inspection, between 50 and 300 rad/s. All test are performed in accordance to MIL-PRF-19500
and test method 1019 of MIL-STD-750 for total Ionizing dose.
– Each wafer of each lot is tested, (note 1). The table below provides for each monitored
parameters of the test conditions and the acceptance criteria
Radiation summary
Radiation test (Note 1)
Wafer test
Part tested
Dose rate
Acceptance
Displacement damage
100 krad ESCC
each
10 biased + 10 unbiased
0.1 rad/s
MIL-STD-750 method 1019
Optional
1. Microsemi MSR products will exceed required testing of ESCC basic specification 22900
2.
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
POST RADIATION
Parameters / Test Conditions
Collector to Base Cutoff Current
VCB = 40 V
VCB = 32 V
Emitter to Base Cutoff Current
VEB = 4.5 V
VEB = 4 V
Collector to Emitter Breakdown Voltage
IC = 10 mA
Forward-Current Transfer Ratio (2)
IC = 10 mA, VCE = 0.35 V
IC = 30 mA, VCE = 0.4 V
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 30 mA, IB = 3.0 mA
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 30 mA, IB = 3.0 mA
Symbol
ICBO
Min.
IEBO
V(BR)CEO
[hFE]
VCE(sat)
15
[20]
[15]
[20]
[10]
VBE(sat)
0.70
Max. Unit
20
µA
0.4
20
µA
0.50
V
120
120
120
120
0.23
V
0.29
0.98
V
1.04
(2) See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre-
and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value
can never exceed the pre-radiation minimum hFE that it is based upon.
T4-LDS-0338-3, Rev. 1 (04/22/14)
©2014 Microsemi Corporation
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