2N5953_J35Z 데이터 시트보기 (PDF) - Fairchild Semiconductor

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2N5953_J35Z

N-Channel RF Amplifier

Fairchild Semiconductor 

September 2007

2N5953

N-Channel RF Amplifier

• This device is designed primarily for electronic switching applications such as low on resistance analog switching.

• Sourced from process 50.

TO-92

1

1. Gate 2. Source 3. Drain

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Symbol

VDG

VGS

IGF

TJ, TSTG

Parameter

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Operating and Storage Junction Temperature Range

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

PD

Total Device Dissipation

Derate above 25°C

RθJC

RθJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Value

30

-30

10

-55 ~ 150

Max.

350

2.8

125

357

Units

V

V

mA

°C

Units

mW

mW/°C

°C/W

°C/W

© 2007 Fairchild Semiconductor Corporation

2N5953 Rev. 1.0.0

1

www.fairchildsemi.com

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