2SA10960Q 데이터 시트보기 (PDF) - Panasonic Corporation

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2SA10960Q

Silicon PNP epitaxial planar type

Panasonic Corporation 

2SA1096, 2SA1096A

PC  Ta

1.6

IC  VCE

−4

TC = 25°C

VCE(sat)  IC

IC / IB = 10

−10

IB = −50 mA

1.2

−3

−45 mA

−40 mA

−35 mA

−1

0.8

−2

−30 mA

−25 mA

TC = 100°C

−20 mA

25°C

–25°C

−15 mA

− 0.1

0.4

−1

0

0

40

80

120

160

Ambient temperature Ta (°C)

−10 mA

−5 mA

0

0 −2 −4 −6 −8 −10 −12

Collector-emitter voltage VCE (V)

− 0.01

− 0.01

− 0.1

–1

Collector current IC (A)

nce/ d −10

na ue −1

te tin −0.1

in n −0.01

a o −0.01

M isc 240

D 200

160

120

pe) VBE(sat)  IC

ge. ed ty IC / IB = 10

lifecycled,sdtaiscontinu TC= –25°C

duct type 100°C

g four Pcroontinued 25°C

1 000

100

10

hFE  IC

VCE = –5 V

25°C

TC = 100°C

–25°C

cludes fpoell,opwlianned dis − 0.1

–1

d in e ty Collector current IC (A)

/Discontimnuaeintenanc Cob  VCB

ce pe, IE = 0

an ty f = 1 MHz

(planeMd aminatienntenance TC= 25°C

1

− 0.01

− 0.1

−1

Collector current IC (A)

−100

−80

−60

−40

VCER  RBE

IC = –10 mA

TC = 25°C

fT  IE

240

VCB = –5 V

f = 200 MHz

TC = 25°C

200

160

120

80

40

0

0.01

0.1

1

10

Emitter current IE (mA)

ICBO  Ta

104

VCB = –40 V

103

102

80

10

−20

40

0

−1

−10

−100

Collector-base voltage VCB (V)

0

0.1

1

10

100

Base-emitter resistance RBE (kΩ)

1

0

40

80 120 160

Ambient temperature Ta (°C)

2

SJD00007BED

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