2SD2701(RevA) 데이터 시트보기 (PDF) - ROHM Semiconductor
부품명
상세내역
제조사
2SD2701 Datasheet PDF : 3 Pages
| |||
Transistors
Low frequency amplifier
2SD2701
2SD2701
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) ≦ 350mV
At IC = 1A / IB = 50mA
zExternal dimensions (Unit : mm)
(2)
(3)
(1)
0.2
1.7
0.2
2.1
0.15Max.
ROHM : TUMT3 Abbreviated symbol : FZ
(1) Base
(2) Emitter
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
15
Collector-emitter voltage
Emitter-base voltage
VCEO
12
VEBO
6
Collector current
IC
2
ICP
4
Power dissipation
PC
0.4
0.8∗2
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, PW=1ms
∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate
Unit
V
V
V
A
A∗1
W
°C
°C
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SD2701
Taping
TL
3000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
30
−
−
V IC=10µA
30
−
−
V IC=1mA
6
−
−
V IE=10µA
−
−
100
nA VCB=30V
−
−
100
nA VEB=6V
−
140 350 mV IC=1A, IB=50mA
270
−
680
− VCE=2V, IC=100mA ∗
−
300
−
MHz VCE=2V, IE=−100mA, f=100MHz ∗
−
11
−
pF VCB=10V, IE=0A, f=1MHz
Rev.A
1/2
Share Link: 