2SD2703 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SD2703 Datasheet PDF : 3 Pages
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Transistors
zElectrical characteristic curves
1000
Ta=100°C
Ta=25°C
100
Ta=−40°C
10
0.001
VCE=2V
Pulsed
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
2SD2703
10
VBE(sat)
Ta=−40°C
Ta=25°C
1
Ta=100°C
IC/IB=20 /1
Pulsed
0.1
Ta=100°C
VCE(sat)
0.01
0.001
0.01
Ta=25°C
Ta=−40°C
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
10
Ta=25°C
VCE=2V
1
0.1
IC/IB=50/1
IC/IB=20/1
0.01
IC/IB=10/1
0.001
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
1
1000
VCE=2V
Pulsed
0.1
Ta=100°C
0.01
Ta=25°C
Ta=−40°C
0.001
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
100
10
0.01
VCE=2V
Ta=25°C
f=100MHz
0.1
1
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter current
1000
100
10
tdon
tr
tstg
tf
Ta=25°C
VCE=5V
1 IC/IB=20/1
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.6 Switching time
100
Cib
Cob
10
IC=0A
f=1MHz
Ta=25°C
1
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.B
2/2
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