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2SK536 데이터 시트보기 (PDF) - ON Semiconductor

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2SK536 Datasheet PDF : 4 Pages
1 2 3 4
Ordering number : EN2550B
2SK536
N-Channel MOSFET
50V, 100mA, Single CP
http://onsemi.com
Features
Large | yfs |
Enhancement type
Low ON-state resistance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current(Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
50
V
±12
V
100 mA
300 mA
200 mW
125
°C
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-010
Ordering & Package Information
Device
Package
Shipping
2SK536-TB-E
CP
SC-59, TO-236, SOT-23, TO-236AB
3,000pcs./reel
memo
Pb-Free
2.9
0.1
2SK536-TB-E
3
Packing Type: TB
Marking
1
0.95
2
0.4
1 : Gate
2 : Drain
3 : Source
CP
BJ
TB
Electrical Connection
2
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
71713 TKIM/52899TH (KT)/4237TA, TS No.2550-1/4

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