2SK536 데이터 시트보기 (PDF) - ON Semiconductor
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2SK536 Datasheet PDF : 4 Pages
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2SK536
Electrical Characteristics at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Gate to Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Source ON Resistance
Symbol
V(BR)DS
IGSS
IDSS
IGS(off)
| yfs |
Ciss
Coss
Crss
RDS(on)
Conditions
ID=10μA, VGS=0V
VGS=10V, VDS=0V
VDS=20V, VGS=0V
VDS=10V, ID=100μA
VDS=10V, ID=50mA, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VGS=10V, ID=10mA
Ratings
Unit
min
typ
max
50
V
0.01
10 nA
1
μA
0.3
0.9
1.5
V
25
40
mS
15
pF
6
pF
0.5
pF
20
Ω
ID -- VDS
160
4.5V
140
120
4.0V
100
3.5V
80
60
3.0V
40
2.5V
20
2.0V
1.5V
0
0
2
4
6
8
10
12
14
Drain to Source Voltage, VDS -- V ITR00795
⏐yfs⏐ -- ID
2
VDS=10V
100
7
5
3
2
10
7
5
3
7 1.0
50
2 3 5 7 10 2 3 5 7 100
Drain Current, ID -- mA
RDS(on) -- VGS
23 5
ITR00797
ID=10mA
40
30
20
10
00
2
4
6
8
10
12
14 16
Gate to Source Voltage, VGS -- V ITR00799
ID -- VGS
160
VDS=10V
140
120
100
80
60
40
20
0
0
2
4
6
8
10
Gate to Source Voltage, VGS -- V ITR00796
⏐yfs⏐ -- VGS
60
50
V
DS=10V
3V
40
30
1V
20
10
0
0.6
1.0
1.4
1.8
2.2
2.6
3.0
Gate to Source Voltage, VGS -- V ITR00798
Ciss, Coss, Crss -- VDS
20
18
16
Ciss
14
12
10
8
6
Coss
4
2
Crss
0
0
2
4
6
8
10
12
14
16
Drain to Source Voltage, VDS -- V ITR00800
No.2550-2/4
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