74LVC1G04-Q100(2013) 데이터 시트보기 (PDF) - NXP Semiconductors.

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74LVC1G04-Q100
(Rev.:2013)

Single inverter

NXP Semiconductors. 

NXP Semiconductors

74LVC1G04-Q100

Single inverter

11. Dynamic characteristics

Table 8. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 6.

Symbol Parameter

Conditions

40 C to +85 C

Min Typ[1] Max

tpd

propagation delay A to Y; see Figure 5

[2]

VCC = 1.65 V to 1.95 V

1.0

3.0

7.5

VCC = 2.3 V to 2.7 V

0.5

2.0

5.0

VCC = 2.7 V

0.5

2.3

5.2

VCC = 3.0 V to 3.6 V

0.5

2.0

4.2

VCC = 4.5 V to 5.5 V

0.5

1.6

3.7

CPD

power dissipation VI = GND to VCC; VCC = 3.3 V [3]

-

14

-

capacitance

40 C to +125 C Unit

Min

Max

1.0

9.5

ns

0.5

6.5

ns

0.5

7.0

ns

0.5

5.5

ns

0.5

5.0

ns

-

-

pF

[1] Typical values are measured at Tamb = 25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.

[2] tpd is the same as tPLH and tPHL.

[3] CPD is used to determine the dynamic power dissipation (PD in W).

PD = CPD  VCC2  fi  N + (CL  VCC2  fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

(CL  VCC2  fo) = sum of outputs.

12. AC waveforms

VI

A input

GND

VOH

Y output

VOL

VM

t PHL

VM

t PLH

mna640

Fig 5.

Measurement points are given in Table 9.

VOL and VOH are typical output voltage levels that occur with the output load.

The input A to output Y propagation delays

74LVC1G04_Q100

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 29 January 2013

© NXP B.V. 2013. All rights reserved.

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