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TDA2030 데이터 시트보기 (PDF) - STMicroelectronics

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TDA2030
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TDA2030 Datasheet PDF : 13 Pages
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THERMAL DATA
Symbol
Parameter
Rth j-case Thermal resistance junction-case
TDA2030
Value
Unit
max
3
°C/W
ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Vs = ± 14V , Tamb = 25°C unless otherwise
specified) for single Supply refer to fig. 15 Vs = 28V
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Vs
Supply voltage
±6
12
± 18
36
V
Id
Quiescent drain current
Ib
Input bias current
Vos
Input offset voltage
Vs = ± 18V (Vs = 36V)
40
60
mA
0.2
2
µA
±2
± 20
mV
Ios
Input offset current
± 20 ± 200
nA
Po
Output power
d
Distortion
d = 0.5%
Gv = 30 dB
f = 40 to 15,000 Hz
RL = 4
RL = 8
d = 10%
f = 1 KHz
RL = 4
RL = 8
Gv = 30 dB
Po = 0.1 to 12W
RL = 4
Gv = 30 dB
f = 40 to 15,000 Hz
12
14
W
8
9
W
18
W
11
W
0.2
0.5
%
Po = 0.1 to 8W
RL = 8
Gv = 30 dB
f = 40 to 15,000 Hz
0.1
0.5
%
B
Power Bandwidth
(-3 dB)
Ri
Input resistance (pin 1)
Gv
Voltage gain (open loop)
Gv
Voltage gain (closed loop)
Gv = 30 dB
Po = 12W
RL = 4
f = 1 kHz
10 to 140,000
Hz
0.5
5
M
90
dB
29.5
30
30.5
dB
eN
Input noise voltage
iN
Input noise current
B = 22 Hz to 22 KHz
3
10
µV
80
200
pA
SVR Supply voltage rejection
RL = 4
Gv = 30 dB
40
50
dB
Rg = 22 k
Vripple = 0.5 Veff
fripple = 100 Hz
Id
Drain current
Po = 14W
Po = W
RL = 4
RL = 8
900
mA
500
mA
3/12

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