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BGA7024 데이터 시트보기 (PDF) - NXP Semiconductors.

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BGA7024 Datasheet PDF : 24 Pages
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NXP Semiconductors
BGA7024
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCC(RF)
Pi(RF)
Tcase
Tj
VESD
RF supply voltage
RF input power
case temperature
junction temperature
electrostatic discharge voltage
Human Body Model (HBM);
according to JEDEC standard 22-A114E
Charged Device Model (CDM);
according to JEDEC standard 22-C101B
6. Thermal characteristics
Min Max
Unit
-
5.7
V
-
25
dBm
40
+85
C
-
150
C
-
2000 V
-
500
V
Table 5.
Symbol
Rth(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
Typ Unit
[1][2] 25 K/W
[1] Case is ground solder pad.
[2] Thermal resistance measured using infrared measurement technique, device mounted on application board
and placed in still air.
7. Static characteristics
Table 6. Characteristics
Input and output impedances matched to 50 . Typical values at VCC = 5 V; Tcase = 25 C; unless
otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
supply voltage
-
5.0 -
V
ICC
supply current
95 110 125 mA
8. Dynamic characteristics
Table 7. Dynamic characteristics
Input and output impedances matched to 50 . Typical values at VCC = 5 V; Tcase = 25 C; see
Section 12 “Application information”; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
f
frequency
[1] 400 -
2700 MHz
Gp
power gain
f = 940 MHz
- 22 -
dB
f = 1960 MHz
- 16 -
dB
f = 2140 MHz
13.5 15 16.5 dB
f = 2445 MHz
- 14 -
dB
BGA7024
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 11 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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