2SD1431 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SD1431

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1431

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A

VBEsat

Base-emitter saturation voltage

IC=4A; IB=0.8A

ICBO

Collector cut-off current

VCB=500V; IE=0

IEBO

Emitter cut-off current

hFE

DC current gain

fT

Transition freuqency

COB

Output capacitance

VEB=5V; IC=0

IC=1A ; VCE=5V

IC=0.1A ; VCE=10V

IE=0 ; VCB=10V;f=1.0MHz

tf

Fall time

IC=4A;IB1=0.8A

MIN TYP. MAX UNIT

5.0

V

1.5

V

10

µA

1

mA

8

3

MHz

165

pF

1.0

µs

2

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