FQA13N50C_F109 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQA13N50C_F109 Datasheet PDF : 9 Pages
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FQA13N50C_F109
N-Channel QFET® MOSFET
500 V, 13.5 A, 480 mΩ
December 2013
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology. This advanced technology
has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power
factor correction, electronic lamp ballasts based on half
bridge topology.
Features
• 13.5 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V,
ID = 6.75 A
• Low Gate Charge (Typ. 43 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
D
G
D
S
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
FQA13N50C_F109
500
13.5
8.5
54
± 30
860
13.5
21.8
4.5
218
1.56
-55 to +150
300
Thermal Characteristics
+θ
+θ
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQA13N50C_F109
0.58
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
6?
6?
©2009 Fairchild Semiconductor Corporation
1
FQA13N50C_F109 Rev. C0
www.fairchildsemi.com
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